Back to results
US 7,094,708 B2Granted
Method of CVD for forming silicon nitride film on substrate
AssigneeTokyo Electron Limited
InventorsHitoshi Kato, Koichi Orito, Hiroyuki Kikuchi, Shingo Maku
Life of this patent
Estimating the term…
Abstract
A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).
Claims15
A CVD method for forming a silicon nitride film on a target substrate, the method comprising:
- heating the substrate accommodated in a process container, at a process temperature;
- and
- supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate heated at the process temperature, thereby depositing a silicon nitride film on the substrate.
Dependencies are inferred from the claim text.