Device and method for etching a substrate by using an inductively coupled plasma

A method for etching at least one of a substrate and a silicon body using an inductively coupled plasma generated by a device, the device including an ICP source for generating a high-frequency electromagnetic alternating field, a reactor for generating the inductively coupled plasma composed of reactive particles by an action of the high-frequency electromagnetic alternating field on a reactive gas, and an arrangement for generating one of a static magnetic field and a time-variable magnetic field between the ICP source and the at least one of the substrate and the silicon body, the arrangement having at least two magnetic field coils arranged one above the other, wherein at least one of the static magnetic field, the time-variable magnetic field, and a pulsed magnetic field whose direction is at least approximately parallel to a direction defined by a tie line connecting the at least one of the substrate and the silicon body and the inductively coupled plasma is generatable using the at least two magnetic field coils, the method comprising the steps of:

• generating a first component magnetic field using a first magnetic field coil of the at least two magnetic field coils;
• and
• generating a second component magnetic field using a second magnetic field coil of the at least two magnetic field coils;
• wherein the first component magnetic field and the second component magnetic field are oriented in opposite directions from one another.