Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

A method of forming a memory device, the method comprising the acts of:

• forming a first conductive electrode layer over a substrate;
• forming a GexSey chalcogenide comprising layer over a the first conductive electrode;
• forming a mask over the GexSeychalcogenide comprising layer, the mask comprising a sidewall;
• plasma etching the GexSeychalcogenide comprising layer in the presence of at least one of NH3, N2H4, and the plasma etching forming a substantially vertical sidewall of the GexSeychalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask.

A method of forming a memory device, the method comprising the acts of:

• forming a first conductive electrode layer over a substrate;
• forming a GexSey chalcogenide comprising layer over a the first conductive electrode;
• forming a second conductive electrode layer over the GexSeychalcogenide comprising layer;
• forming a mask over the second conductive electrode layer, the mask comprising a sidewall;
• and
• plasma etching the first and second conductive electrode layers and the GexSeychalcogenide comprising layer in the presence of at least one of NH3, N2H4, and CxHy, the plasma etching forming a substantially vertical sidewall of the GexSey chalcogenide comprising layer which is aligned with a lateral outermost extent of the sidewall of the mask
• wherein x and y in GexSey represents molar fractions, and wherein x and y in CxHy respectively represents moles of carbon and hydrogen.