Semiconductor device and method of manufacturing the same

A method of manufacturing a semiconductor device having a carbon nanotube structure in a through hole of a substrate, the method comprising the steps of:

• (a) selectively forming the carbon nanotube structure on a process
• substrate;
• (b) forming a metal film on a surface of the carbon nanotube structure;
• (b1) forming said through hole in the substrate;
• (c) forming an electrode covering the through hole on one of opposing surfaces of the substrate;
• and
• (d) inserting the carbon nanotube structure into the through hole from a side of another one of the opposing surfaces of the substrate, and adhering the carbon nanotube structure to the electrode by heating the electrode and the metal film.

A method of manufacturing a semiconductor device having an interconnection part formed of a plurality of carbon nanotubes and a conductive material, the method comprising the steps of:

• (a) forming a growth mode control layer of one of a metal and a metal oxide thereof, the metal being selected from a group of Ti, Mo, V, Nb, and W;
• (b) forming a catalyst layer covering the growth mode control layer;
• (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part;
• and
• (d) filling the interconnection part with the conductive material.

A method of manufacturing a semiconductor device having an interconnection part formed of a plurality of carbon nanotubes and a conductive material, the method comprising the steps of:

• (a) forming a plurality of conductive projections in a region where the interconnection part is to be formed;
• (b) forming a growth mode control layer covering the conductive projections, the growth mode control layer being formed of one of a metal and a metal oxide thereof, the metal being selected from a group of Ti, Mo, V, Nb, and W;
• (c) forming a catalyst layer covering the growth mode control layer;
• (d) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD and applying an electric field in a direction from one to another between the conductive projections so that the carbon nanotubes serve as the interconnection part;
• and
• (e) filling the interconnection part with the conductive material.