Integration of titanium and titanium nitride layers

A method for forming a metal-containing material on a substrate, comprising:

• forming a metallic layer on a substrate by a plasma-enhanced cyclical vapor deposition process;
• exposing the metallic layer to a soak process;
• and
• forming a metal nitride layer on the metallic layer by a second vapor deposition process.

A method for forming a metal-containing material on a substrate, comprising:

• forming a metallic layer on a substrate by a cyclical vapor deposition process;
• exposing the metallic layer to a soak process;
• and
• forming a metal nitride layer on the metallic layer by a plasma-enhanced vapor deposition process.

A method for forming a metal-containing material on a substrate, comprising:

• forming a titanium-containing layer on a substrate by a plasma-enhanced cyclical vapor deposition process;
• exposing the substrate to a silicon-containing compound during a soak process, wherein the silicon-containing compound is selected from the group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, tetrachlorosilane, hexachlorodisilane, derivatives thereof, and combinations thereof;
• and
• depositing a conductive material on the substrate by a second vapor deposition process.

A method for forming a titanium-containing material on a substrate, comprising:

• forming a titanium-containing layer on a substrate by a first vapor deposition process;
• exposing the titanium-containing layer to hydrogen during a soak process to form a pretreated layer thereon;
• and
• forming a nitride layer on the pretreated layer by a second vapor deposition process.