Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over an insulating surface;
• forming a first insulating film over the semiconductor layer;
• forming a first wiring comprising at least a laminate of a first conductive film with a property as a barrier and a second conductive film containing copper as its main component, said step of forming a first wiring including the steps of:
• (i) forming the first conductive film over the first insulating film;
• (ii) etching the first conductive film;
• (iii) forming the second conductive film on the first conductive film through an opening of a mask;
• (iv) reducing a width of the second conductive film with dry etching;
• doping an impurity element into the semiconductor layer with the first wiring as a mask to form an impurity region;
• forming a second insulating film over the first wiring;
• forming a third insulating film over the second insulating film;
• forming a contact hole to reach the impurity region in the second insulating film and the third insulating film;
• and
• forming a second wiring electrically connected to the impurity region over the third insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over an insulating surface;
• forming a first insulating film over the semiconductor layer;
• forming a first wiring comprising at least a laminate of a first conductive film with a property as a barrier and a second conductive film containing copper as its main component, said step of forming a first wiring including the steps of:
• (i) forming the first conductive film over the first insulating film;
• (ii) etching the first conductive film;
• (iii) forming the second conductive film on the first conductive film through an opening of a mask;
• (iv) reducing a width of the second conductive film with dry etching;
• doping an impurity element into the semiconductor layer with the first wiring as a mask to form an impurity region;
• forming a second insulating film over the first wiring;
• forming a third insulating film over the second insulating film;
• forming a fourth insulating film over the third insulating film;
• forming a contact hole to reach the impurity region in the second insulating film and the third insulating film and the fourth insulating film;
• and
• forming a second wiring electrically connected to the impurity region over the fourth insulating film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over an insulating surface;
• forming a first insulating film over the semiconductor layer;
• forming a first wiring comprising at least a laminate of a first conductive film with a property as a barrier and a second conductive film containing copper as its main component, said step of forming a first wiring including the steps of:
• (i) forming the first conductive film over the first insulating film;
• (ii) etching the first conductive film;
• (iii) forming the second conductive film on the first conductive film through an opening of a mask;
• (iv) reducing a width of the second conductive film with dry etching;
• doping an impurity element into the semiconductor layer with the first wiring as a mask to form an impurity region;
• forming a second insulating film over the first wiring;
• forming a contact hole to reach the impurity region in the second insulating film;
• and
• forming a second wiring electrically connected to the impurity region over the second insulating film,
• wherein the first conductive film has a tapered shape.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over an insulating surface;
• forming a first insulating film over the semiconductor layer;
• forming a first wiring comprising at least a laminate of a first conductive film with a property as a barrier and a second conductive film containing copper as its main component, said step of forming a first wiring including the steps of:
• (i) forming the first conductive film over the first insulating film;
• (ii) etching the first conductive film;
• (iii) forming the second conductive film on the first conductive film through an opening of a mask;
• (iv) reducing a width of the second conductive film with dry etching;
• doping an impurity element into the semiconductor layer with the first wiring as a mask to form an impurity region;
• forming a second insulating film over the first wiring;
• forming a contact hole to reach the impurity region in the second insulating film;
• and
• forming a second wiring electrically connected to the impurity region over the second insulating film,
• wherein the second conductive film has a tapered shape.

A method of manufacturing a semiconductor device comprising the steps of:

• forming a semiconductor layer over an insulating surface;
• forming a first insulating film over the semiconductor layer;
• forming a first wiring comprising at least a laminate of a first conductive film with a property as a barrier and a second conductive film containing copper as its main component, said step of forming a first wiring including the steps of:
• (i) forming the first conductive film over the first insulating film;
• (ii) etching the first conductive film;
• (iii) forming the second conductive film on the first conductive film through an opening of a mask;
• (iv) reducing a width of the second conductive film with dry etching;
• doping an impurity element into the semiconductor layer with the first wiring as a mask to form an impurity region;
• forming a second insulating film over the first wiring;
• forming a contact hole to reach the impurity region in the second insulating film;
• and
• forming a second wiring electrically connected to the impurity region over the second insulating film,
• wherein the first conductive film has a tapered shape, and
• wherein the second conductive film has a tapered shape.