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US 7,094,681 B2Granted
Semiconductor device fabrication method
AssigneeKabushiki Kaisha Toshiba
InventorsKeiji Fujita, Rempei Nakata, Hideshi Miyajima
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Abstract
Disclosed is a semiconductor device comprising a semiconductor substrate, a porous insulating film formed above the semiconductor substrate, the porous insulating film having a relative dielectric constant of 2.5 or less and including a first insulating material, at least a portion of pores in the porous insulating film having on the inner wall thereof a layer of a second insulating material which differs in nature from the first insulating material, and a plug and/or a wiring layer buried in the porous insulating film.
Claims16
A method for manufacturing a semiconductor device comprising:
- forming a porous insulating film above a semiconductor substrate, said porous insulating film including pores therein;
- forming a recessed portion on a surface of said porous insulating film;
- filling said recessed portion with a conductive material to form at least one of a plug and a wiring layer;
- and
- subsequent to filling said recessed portion with said conductive material, enlarging sizes of said pores through radiation of an electron beam onto said porous insulating film.
2 more elements
Dependencies are inferred from the claim text.