Formation of a tantalum-nitride layer
AssigneeApplied Materials, Inc.
InventorsSean M. Seutter, Michael X. Yang, Ming Xi
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Abstract
A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.
Claims22
A method of film deposition for integrated circuit fabrication, comprising:
- forming a tantalum nitride layer by sequentially chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber;
- reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process;
- and
- depositing a metal-containing layer on the tantalum nitride layer by a deposition process.
A method of film deposition for integrated circuit fabrication, comprising:
- forming a tantalum nitride layer with a first nitrogen concentration on a substrate by an atomic layer deposition process;
- exposing an upper portion of the tantalum nitride layer to a plasma annealing process to form a tantalum-containing layer with a second nitrogen concentration;
- and
- depositing a metal-containing layer on the tantalum-containing layer.
A method of film deposition for integrated circuit fabrication, comprising:
- forming a tantalum-containing layer with a sheet resistance of about 1,200 μΩ-cm or less by a plasma annealing process on a tantalum nitride layer deposited by an atomic layer deposition process on a substrate.
Dependencies are inferred from the claim text.