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US 7,094,673 B2Granted
Etch stop layer in poly-metal structures
AssigneeMicron Technology, Inc.
InventorVishnu K. Agarwal
Life of this patent
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Abstract
In accordance with one embodiment of the present invention, a method of forming an etch stop layer in a semiconductor structure is provided. A polysilicon layer on the semiconductor substrate and ions are implanted into the polysilicon layer to form an etch stop layer. An oxide layer can be provided between the semiconductor substrate and the polysilicon layer.
Claims15
A method of forming an etch stop layer in a semiconductor structure comprising:
- providing a semiconductor substrate;
- providing a poly-metal structure with at least one polysilicon layer on said semiconductor substrate, wherein said at least one polysilicon layer has an upper surface and a lower surface;
- and
- implanting ions into said at least one polysilicon layer to form at least one substantially horizontal etch stop layer within said at least one polysilicon layer and spaced from said upper surface and said lower surface, wherein the position of said at least one substantially horizontal etch stop layer determines the interface between an oxidized layer and an oxidation barrier layer on said at least one polysilicon layer.
1 more element
A method of forming an etch stop layer in a semiconductor structure comprising:
- providing a semiconductor substrate;
- providing a poly-metal structure with at least one polysilicon layer on said semiconductor substrate, wherein said at least one polysilicon layer has an upper surface and a lower surface;
- providing an oxide layer between said semiconductor substrate and said at least one polysilicon layer;
- and
- implanting ions selected from oxygen, nitrogen, carbon, fluorine, and combinations thereof into said at least one polysilicon layer to form a substantially horizontal etch stop layer within said at least one polysilicon layer and spaced from said upper surface and said lower surface, wherein said substantially horizontal etch stop layer comprising SiOx, SiNx, or combinations thereof and wherein the position of said at least one substantially horizontal etch stop layer determines the interface between an oxidized layer and an oxidation barrier layer on said at least one polysilicon layer.
2 more elements
Dependencies are inferred from the claim text.