Back to results
US 7,094,668 B2Granted
Annealing process and device of semiconductor wafer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsWalter Schwarzenbach, Jean-Marc Waechter
Life of this patent
Estimating the term…
Abstract
A device and method for annealing a wafer. The preferred embodiment includes applying a basic thermal budget to a weakened zone of a wafer, substantially evenly over the weakened zone. The basic thermal budget is insufficient to detach a detachment layer from a remainder of the wafer at the weakened zone. An additional thermal budget is applied locally in an initiation region of the weakened zone to initiate the detachment of the detachment layer at the weakened zone.
Claims28
A method of annealing a wafer, comprising:
- substantially evenly applying a homogeneous and even basic thermal budget over at least ⅔ of a weakened zone of the wafer, the basic thermal budget being insufficient to detach a detachment layer from a remainder of the wafer at the weakened zone;
- and
- applying an additional thermal budget locally in an initiation region of the weakened zone in which the basic thermal budget is applied for initiating detachment of the detachment layer at the weakened zone.
Dependencies are inferred from the claim text.