Method for fabricating semiconductor photodetector
AssigneeHamamatsu Photonics K.K.
InventorsMinoru Niigaki, Kazutoshi Nakajima
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Abstract
Multilayer films (2 to 7 ) containing a light absorption layer (4) are formed on a GaAs substrate. After laminating the GaAs substrate (1) and a glass substrate (8) so that an uppermost surface film (7) of the multilayer film and the glass substrate (8) may come into contact with each other, by pressurizing between the GaAs substrate (1) and the glass substrate (8) and heating them together, both substrates (1) and (8) are fusion-bonded. Next, the GaAs substrate (1) and the buffer layer (2) are first removed, and then the etch stop layer (3) is removed. Then, while coming into contact with the light absorption layer (4), comb-type Schottky electrodes (10) and (11), which are mutually apart, are formed.
Claims3
A method for manufacturing a semiconductor photodetector including a light absorption layer in which electrons and holes are excited by absorption of incident light, the method comprising:
- forming a multilayer film including said light absorption layer on a substrate,
- adhering said substrate on which said multilayer film is formed and a transparent substrate so that an uppermost surface film of said multilayer film may come into contact with one surface of said transparent substrate formed of a material transparent to the incident light, and
- removing said substrate adhered to said transparent substrate, or said substrate and some layers of said multilayer film so that at least said light absorption layer may remain on said transparent substrate, and
- forming two electrodes which are mutually apart on said multilayer film which remains on said transparent substrate.
Dependencies are inferred from the claim text.