Semiconductor device and method of manufacturing the same

A method for manufacturing a semiconductor device comprising:

• forming a device isolation layer for defining a device region and a high concentration impurity diffused region acting as a substrate/well potential take-out region;
• forming a gate electrode on a surface of the substrate within the device region;
• implanting ions in the device region and the high concentration impurity diffused region with the device isolation layers and the gate electrode being as implantation mask;
• depositing low resistance layer at least on the upper surface of the high concentration impurity diffused region, this low resistance layer acting as a shield during operation;
• depositing an inter-layer insulating film;
• and
• forming a first interconnection connected to the gate electrode and a second interconnection connected to the high concentration impurity diffused region on the said inter-layer insulating film, at least the first interconnection being disposed so that it runs above the high concentration impurity diffused region.