Single and dual damascene techniques utilizing composite polymer dielectric film

In an integrated circuit, a method of forming an electrical connection to an underlying electrically conductive element, wherein the electrically conductive element is disposed within a first polymer dielectric film, the method comprising:

• forming a second polymer dielectric film over the electrically conductive element and the first polymer dielectric film, wherein the second polymer dielectric film has a composite structure including a first silane-containing adhesion promoter layer chemically bonded to a first low dielectric constant polymer layer, wherein the first adhesion promoter layer is formed from at least one material having a general structure of (RZ)x—Si—(W—T)y, wherein W is selected from —O—, —CH2—, —(CH2)aC═OO—, and —(CH2)a—OO═C—;
• wherein T is selected from —CR═CR′R″, alkyl chlorides, alkyl bromides, alkyl iodides, and —RC═O;
• wherein Z is selected from O and NR;
• wherein R, R′and R″are an H, alkyl or aromatic group;
• wherein a is 0 or an integer;
• wherein x=1,2 or 3;
• wherein y=1,2 or 3;
• and wherein x+y=4;
• forming an etch stop layer over the second polymer dielectric film;
• forming a third polymer dielectric film over the etch stop layer;
• forming a hard mask layer over the third polymer dielectric film;
• etching a via through the third polymer dielectric film, the etch stop layer, and the second polymer dielectric film to expose the electrically conductive element;
• etching a trench through the third polymer dielectric film such that the trench at least partially overlaps the via;
• and
• depositing an electrically conductive material in the via and the trench, wherein the electrically conductive material contacts the electrically conductive element in the first polymer dielectric layer.