Method of manufacturing trench capacitor utilizing stabilizing member to support adjacent storage electrodes
AssigneeSamsung Electronics Co., Ltd.
InventorJe-Min Park
Life of this patent
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Abstract
A semiconductor device has a stabilizing member that encloses an upper portion of a storage electrode to improve structural stability. A dielectric layer and a plate electrode are successively formed on the storage electrode including a stabilizing member. Since the stabilizing member includes a protruding portion to support the storage electrode and an adjacent storage electrode, all of the storage electrodes in a unit cell of a semiconductor device are structured to prevent a collapse. Also, the semdevice can have a very high height without collapse when the capacitors have extremely high aspect ratios. Therefore, the capacitors may have greatly enhanced capacitance in comparison with a conventional capacitor.
Claims12
A method of manufacturing a semiconductor device, the method comprising:
- forming a contact region at a surface portion of a semiconductor substrate;
- forming at least one first mold layer on the substrate;
- forming a first insulation layer on the first mold layer;
- forming a second mold layer on the first insulation layer;
- forming a first opening by partially etching the second mold layer, the first insulation layer, and the first mold layer;
- forming a stabilizing member on an inner sidewall of the first opening, wherein the stabilizing member has a protruding portion to support adjacent storage electrodes;
- forming a contact hole to expose an inner sidewall of the stabilizing member and the contact region;
- forming a storage electrode to contact the contact region on the inner sidewall of the stabilizing member and an inner sidewall of the contact hole;
- forming a dielectric layer on the storage electrode;
- and
- forming a plate electrode on the dielectric layer.
Dependencies are inferred from the claim text.