Method of forming poly-silicon thin film transistors
AssigneeIndustrial Technology Research Institute
InventorsChi-Lin Chen, Shun-Fa Huang, Liang-Tang Wang
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Abstract
A method of forming poly-silicon thin film transistors is described. An amorphous silicon thin film transistor is formed on a substrate, and then the Infrared (IR) heating process is used. A gate metal and source/drain metal are heated rapidly, and conduct heat energy to an amorphous silicon layer. Next, crystallization occurs in the amorphous silicon layer to form poly-silicon. Therefore a poly-silicon thin film transistor is produced.
Claims13
A method of forming poly-silicon thin film transistors, comprising the steps of:
- providing an amorphous silicon thin film transistor having a gate metal and a source/drain metal;
- and
- heating the amorphous silicon thin film transistor with an IR energy source to change the amorphous silicon thin film transistor into a poly-silicon thin film transistor.
A method of forming poly-silicon thin film transistors employed for flat panel display, comprising the steps of:
- forming a gate metal on a substrate;
- forming a gate insulator, an amorphous silicon layer, and a doped amorphous silicon layer in turn on the gate metal and the substrate simultaneously;
- patterning the amorphous silicon layer and the doped amorphous silicon layer to form an active layer region;
- forming a source/drain metal on the doped amorphous silicon layer;
- patterning the source/drain metal to form a data line;
- patterning the doped amorphous silicon layer to define a channel region;
- and
- performing a heating process with an IR energy source, wherein the gate metal and the source/drain metal rapidly absorb heat energy from the IR energy source and transfer the heat energy to the amorphous silicon layer, and the amorphous silicon layer subsequently crystallizes to become a poly-silicon layer.
Dependencies are inferred from the claim text.