Method of forming a conductive line
AssigneeMicron Technology, Inc.
InventorH. Montgomery Manning
Life of this patent
Estimating the term…
Abstract
A method of forming a conductive line includes forming conductive material received over a semiconductor substrate into a line having opposing sidewalls. Insulative material is deposited over the line, and is planarized. An insulating spacer forming layer is deposited over the line and the planarized insulative material. The spacer forming layer is anisotropically etched form a pair of insulative spacers over the opposing line sidewalls with the insulative material being received between at least one of the sidewalls and one insulative spacer formed thereover. The insulative material as so received has a maximum lateral thickness which is greater than a maximum lateral thickness of the one sidewall spacer.
Claims27
A method of forming a conductive line comprising:
- forming conductive material received over a semiconductor substrate into a line, the line having opposing sidewalls;
- depositing insulative material over the line;
- planarizing the insulative material;
- depositing an insulating spacer-forming layer over the line and the planarized insulative material;
- and
- anisotropically etching the spacer-forming layer to form a pair of insulative spacers over the opposing line sidewalls, the insulative material being received between at least one of the sidewalls and one insulative spacer formed thereover, the insulative material as received between the one sidewall and the one sidewall spacer formed thereover having a maximum lateral thickness which is greater than a maximum lateral thickness of the one sidewall spacer.
Dependencies are inferred from the claim text.