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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hideomi Suzawa, Koji Ono, Toru Takayama
Estimating the term…
There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
A method of fabricating a light emitting device, comprising the steps of:
A method of fabricating a light emitting device, comprising the steps of:
A method of fabricating a light emitting device, comprising the steps of:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
Characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes: characterised by the doping profiles, e.g.…
Term ended 4 Jun 2021 (estimated)
1. Field of the Invention
The present invention relates to a device (hereinafter referred to as a light emitting device) including an element (hereinafter referred to as a light emitting element) having a luminous material interposed between electrodes. Particularly, the present invention relates to a light emitting device including a light emitting element (hereinafter referred to as an EL element) using, as a luminous material, an organic compound in which EL (Electro Luminescence) is obtained. Incidentally, an organic EL display and an organic light emitting diode (OLED: Organic Light Emitting Diode) are included in the light emitting device of the present invention.
The luminous material which can be used for the present invention includes any luminous materials which emit light (phosphorescence and/or fluorescence) through singlet excitation, triplet excitation, or both excitations.
FIGS. 1A to 1F are views showing manufacturing steps of an n-channel transistor.
FIGS. 2A to 2E are views showing manufacturing steps of a light emitting device.
FIGS. 3A to 3D are views showing manufacturing steps of the light emitting device.
An example of fabricating steps of an n-channel transistor characterizing the present invention will be described with reference to FIGS. 1A to 1F. In FIG. 1A, reference numeral 100 designates an insulator which is a substrate provided with an insulating film on its surface, an insulating substrate, or an insulating film. A semiconductor film (typically, a silicon film) 101 is formed on the insulator 100, and this semiconductor film 101 becomes an active layer of a transistor. The semiconductor film 101 is covered with an insulating film 102 containing silicon, and this insulating film 102 becomes a gate insulating film of the transistor. As the insulating film containing silicon, it is possible to use a silicon oxide film, a silicon nitride film, a silicon nitride oxide film, or a laminate film of a combination of these.
Next, a conductive film in which at least two conductive films are laminated, is formed on the insulating film 102 containing silicon. Here, a first conductive film 103 and a second conductive film 104 are formed. Here, it is preferable to make such a combination that the selection ratio at the time of etching can be secured between the first conductive film 103 and the second conductive film 104.
As a typical example of such a combination, it is possible to enumerate 1) combination of a tantalum nitride film as the first conductive film and a tungsten film as the second conductive film, 2) combination of a tungsten film as the first conductive film and an aluminum alloy film as the second conductive film, and 3) combination of a titanium nitride film as the first conductive film and a tungsten film as the second conductive film.