Field effect transistor and method of producing the same
AssigneeCanon Kabushiki Kaisha
InventorsDaisuke Miura, Tomonari Nakayama
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AssigneeCanon Kabushiki Kaisha
InventorsDaisuke Miura, Tomonari Nakayama
Estimating the term…
A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum diameter of 1 μm or more, wherein R1 and R2 each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3 denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
A method of producing a field effect transistor comprising an organic semiconductor layer, comprising a step of heating a coating film comprising a porphyrin compound represented by general formula (1):
A field effect transistor comprising an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by general formula (2):
A field effect transistor comprising an organic semiconductor layer composed of a crystallized layer of a naphthoporphyrin compound represented by general formula (2):
Dependencies are inferred from the claim text.