Semiconductor device manufacturing method
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMika Okumura, Makio Horikawa, Kimitoshi Satou
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Abstract
A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.
Claims16
A semiconductor device manufacturing method comprising:
- (a) forming an interconnection in a surface of an insulating layer provided on a semiconductor substrate;
- (b) selectively removing said insulating layer to form a first opening that exposes said semiconductor substrate;
- (c) after said selectively removing (b), forming, over said insulating layer, a sacrificial layer having a second opening that exposes a center portion of said interconnection and a third opening that includes said first opening and is larger than said first opening;
- (d) forming a conductive semiconductor all over the structure obtained in said forming (c);
- (e) forming a first mask on said conductive semiconductor;
- (f) etching said conductive semiconductor using said first mask to form a first electrode connected to said interconnection;
- (g) forming a conductive film all over the structure obtained in said etching (f);
- (h) selectively removing said conductive film to form a second electrode in contact with said semiconductor substrate in said first opening;
- and
- (i) removing said sacrificial layer.
A semiconductor device manufacturing method, comprising:
- (a) forming an insulating layer on a surface of a semiconductor substrate having a locally projecting raised portion, which is exposed by said insulating layer;
- (b) forming an interconnection in a surface of said insulating layer;
- (c) forming, over said insulating layer, a sacrificial layer having a first opening that exposes a center portion of said interconnection and a second opening that exposes a center portion of said raised portion;
- (d) forming a conductive semiconductor all over the structure obtained in said forming (c);
- (e) forming a first mask on said conductive semiconductor;
- (f) etching said conductive semiconductor using said first mask to form a first electrode connected to said interconnection;
- (g) forming a conductive film all over the structure obtained in said etching (f);
- (h) selectively removing said conductive film to form a second electrode in contact with said raised portion;
- and
- (i) removing said sacrificial layer.
A semiconductor device manufacturing method, comprising:
- (a) forming an insulating layer on a semiconductor substrate;
- (b) forming, over said insulating layer, a first sacrificial layer having a first opening;
- (c) forming a first electrode on said sacrificial layer;
- (d) forming a second sacrificial layer all over the structure obtained in said forming (c);
- (e) etching back at least said second sacrificial layer;
- (f) covering the structure obtained in said etching (e) with a photoresist having a second opening that opens inside said first opening;
- (g) etching said second sacrificial layer using said photoresist as a mask;
- (h) forming a second electrode in contact with said semiconductor substrate in an area opened in said etching (g);
- and
- (i) removing said first sacrificial layer and said second sacrificial layer.
A semiconductor device manufacturing method, comprising:
- (a) forming an insulating layer on a semiconductor substrate;
- (b) forming, over said insulating layer, a first sacrificial layer having a first opening;
- (c) forming, on said sacrificial layer, a first electrode and a dummy body between said first electrode and said first opening;
- (d) forming a photoresist on the structure obtained in said forming (c), said photoresist having a second opening that opens inside said first opening;
- (e) etching said insulating layer using said photoresist as a mask to expose said semiconductor substrate;
- (f) forming a second electrode in contact with said exposed semiconductor substrate;
- and
- (g) removing said sacrificial layer.
Dependencies are inferred from the claim text.