Method of manufacturing a CMOS image sensor
AssigneeDongbu Electronics Co., Ltd.
InventorMeng An Jung
Life of this patent
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Abstract
A method of manufacturing a CMOS image sensor. The present invention enables forming micro-lenses having a uniform shape throughout a semiconductor substrate. The method of manufacturing a CMOS image sensor includes: coating a color filter layer and a semiconductor substrate with a first photoresist; selectively exposing the first photoresist to light to define a planarization layer; coating the first photoresist with a second photoresist; selectively exposing the second photoresist to define a plurality of micro-lens bodies; and baking the plurality of micro-lens bodies to form a plurality of micro-lenses.
Claims18
A method of manufacturing microlenses in a CMOS image sensor, comprising:
- (a) coating a color filter layer over a semiconductor substrate with a first photoresist;
- (b) selectively exposing the first photoresist to light;
- (c) coating the first photoresist with a second photoresist;
- (d) selectively exposing the second photoresist to light to define a plurality of micro-lens bodies;
- (e) removing areas of the first photoresist to form a planarization layer under the plurality of micro-lens bodies;
- and
- (f) heating the plurality of micro-lens bodies to form a plurality of micro-lenses.
Dependencies are inferred from the claim text.