Mask, manufacturing method for mask, and manufacturing method for semiconductor device

A method of manufacturing a mask comprising:

• providing, in a first area, a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate and a first opening area surrounded by the first surrounding area, and, in a second area, a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area;
• and
• forming a transparent film in a selected area including at least a part of the second opening area, and giving a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

A method of manufacturing a mask comprising:

• providing, in a first area, a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate and a first opening area surrounded by the first surrounding area, and, in a second area, a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area;
• and
• supplying an etching source to a selected area including at least a part of the second surrounding area to etch the halftone phase shift film in the selected area, and giving a first phase difference to exposure light passing through that part of the second surrounding area which includes the etched part of the halftone phase shift film relative to exposure light passing through the second opening area.