Method for producing a positively doped semiconductor with large forbidden band
OwnerFerechteh Hosseini Teheraniinventor
Life of this patent
Estimating the term…
Abstract
A method of producing a p doped wide bandgap semiconductor including growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
Claims14
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of indium acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of arsenic acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with a selected p dopant.
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with magnesium as a p dopant.
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of an element apt acting as a surfactant at a growth surface of the semiconductor and inhibiting formation of vacancies, and doping the semiconductor with hydrogen as a p dopant.
A method of producing a p doped wide bandgap semiconductor comprising growing a semiconductor in the presence of a surfactant at a growth surface of the semiconductor to inhibit formation of vacancies, and doping the semiconductor with a selected p dopant.
Dependencies are inferred from the claim text.