Source reagent compositions for CVD formation of high dielectric constant and ferroelectric metal oxide thin films and method of using same
AssigneeAdvanced Technology Materials, Inc.
InventorsThomas H. Baum, Jeffrey F. Roeder, Chongying Xu, Bryan C. Hendrix
Life of this patent
Estimating the term…
Abstract
Chemical vapor deposition (CVD) precursor compositions for forming metal oxide high dielectric constant (κ) thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(β-diketonate)2(OR)2, wherein M is Hf, Zr or Ti, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.
Claims63
A CVD source reagent composition for forming a metal oxide thin film, said source reagent composition comprising a metal precursor of the formula:
- wherein:
- M is Ti;
- each of R1, R2, R3, and R4 is independently selected from the group consisting of H, aryl, perfluoroaryl, C1-C8 alkyl, and C1-C8 perfluoroalkyl;
- and
- R5 and R6 are both t-butyl groups.
Dependencies are inferred from the claim text.