# US 7,091,054 B2 · Manufacturing method for emitter for electron-beam projection lithography

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- Number: US 7,091,054 B2
- Document ID: US7091054B2
- Status: Granted
- Kind: B2
- Application number: 11/057,469
- Filed: 2005-02-15
- Published: 2005-07-07
- Granted: 2006-08-15
- Earliest claimed: 2003-03-15
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: In-kyeong Yoo; Chang-wook Moon; Soo-hwan Jeong; Dong-wook Kim
- Web page: https://patentgrep.com/patent/US7091054B2

## CPC

- H01J 1/312: having an electric field perpendicular to the surface, e.g. tunnel-effect cathodes of metal-insulator-metal [MIM] type {(H01J1/304- H01J1/308 take precedence)}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- H01J 9/022: {of cold cathodes}
- H01J 9/027: {of thin film cathodes}
- H01J 2237/31774: Multi-beam
- H01J 2237/31783: M-I-M cathode
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

An emitter for an electron-beam projection lithography (EPL) system and a manufacturing method therefor are provided. The electron-beam emitter includes a substrate, an insulating layer overlying the substrate, and a gate electrode including a base layer formed on top of the insulating layer to a uniform thickness and an electron-beam blocking layer formed on the base layer in a predetermined pattern. The manufacturing method includes steps of: preparing a substrate; forming an insulating layer on the substrate; forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness; forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and patterning the electron-beam blocking layer in a predetermined pattern by anodizing. The emitter provides a uniform electric field within the insulating layer and simplify the manufacturing method therefor.

## Claims

### Claim 1

A method of manufacturing an emitter for an electron-beam projection lithography (EPL) system, the method comprising steps of:
(a) preparing a substrate;
(b) forming an insulating layer on the substrate;
(c) forming a base layer of a gate electrode by depositing a conductive metal on the insulating layer to a predetermined thickness;
(d) forming an electron-beam blocking layer of the gate electrode by depositing a metal capable of anodizing on the base layer to a predetermined thickness; and
(e) patterning the electron-beam blocking layer in a predetermined pattern by anodizing.

### Claim 2 (depends on 1)

The method of claim 1, wherein the substrate is a silicon wafer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the insulating layer is made of a silicon oxide layer formed by thermally oxidizing the surface of the silicon wafer.

### Claim 4 (depends on 1)

The method of claim 1, before step (b), further comprising step of forming a lower electrode on the substrate.

### Claim 5 (depends on 4)

The method of claim 4, wherein, in step (b), the insulating layer is formed by depositing a metal capable of anodizing on the lower electrode and anodizing the metal.

### Claim 6 (depends on 1)

The method of claim 1, wherein in step (c), the conductive metal is selected from the group consisting of gold (Au), platinum (Pt), aluminum (Al), titanium (Ti), and tantalum (Ta).

### Claim 7 (depends on 1)

The method of claim 1, wherein in step (d), the metal capable of anodizing is selected from the group consisting of titanium (Ti), aluminum (Al), and ruthenium (Ru).

### Claim 8 (depends on 1)

The method of claim 1, wherein step (e) comprises steps of:
anodizing the electron-beam blocking layer in a predetermined pattern by scanning probe microscope (SPM) lithography; and
removing the anodized portion of the electron-beam blocking layer by etching.

### Claim 9 (depends on 1)

The method of claim 1, wherein step (e) comprises steps of:
coating a resist on the surface of the electron-beam blocking layer;
patterning the resist in a predetermined pattern;
anodizing a portion of the electron-beam blocking layer exposed by patterning of the resist; and
removing the anodized portion of the electron-beam blocking layer by etching and cleaning off the resist.

### Claim 10

A method of manufacturing an emitter for an electron-beam projection lithography (EPL) system, the method comprising steps of:
(a) preparing a substrate;
(b) forming an insulating layer on the substrate;
(c) depositing a first silicon layer on the insulating layer to a uniform thickness;
(d) patterning the first silicon layer in a predetermined pattern; and
(e) depositing a second silicon layer on the insulating layer exposed in step (d) and first silicon layer and forming a gate electrode comprised of the first and second silicon layers.

### Claim 11 (depends on 10)

The method of claim 10, wherein the substrate is a silicon wafer.

### Claim 12 (depends on 11)

The method of claim 11, wherein the insulating layer is made of a silicon oxide layer formed by thermally oxidizing the surface of the silicon wafer.

### Claim 13 (depends on 10)

The method of claim 10, before step (b), further comprising step of forming a lower electrode on the substrate.

### Claim 14 (depends on 13)

The method of claim 13, wherein, in step (b), the insulating layer is formed by depositing a metal capable of anodizing on the lower electrode and anodizing the metal.

### Claim 15 (depends on 10)

The method of claim 10, wherein step (d) comprises steps of: coating a resist on the surface of the first silicon layer; patterning the resist in a predetermined pattern; and etching the first silicon layer using the resist as an etch mask.