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US 7,084,414 B2Granted
Charged particle beamlet exposure system
AssigneeMapper Lithography IP B.V.
InventorsMarco Jan-Jaco Wieland, Pieter Kruit
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AssigneeMapper Lithography IP B.V.
InventorsMarco Jan-Jaco Wieland, Pieter Kruit
Estimating the term…
The invention relates to a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising: a first aperture means comprising at least a first substantially round aperture for partially shielding an emitted charged particle beam for forming a charged particle beamlet; a lens system comprising at least one lens for focussing a charged particle beamlet from said first aperture within or in the vicinity of an image focal plane of said lens; a deflector means, substantially located in said image focal plane, comprising at least one beamlet deflector for the deflection of a passing charged particle beamlet upon the reception of a control signal, and a second aperture means comprising at least one second substantially round aperture positioned in the conjugate plane of the first aperture, and said second aperture being aligned with said first aperture and said beamlet deflector for blocking said charged particle beamlet upon deflection by said beamlet deflector and to transmit it otherwise.
A charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising:
A charged particle exposure apparatus for exposing a substrate to a plurality of charged particle beamlets, comprising a first aperture array comprising a plurality of first apertures, one aperture for each charged particle beamlet, a lens system comprising a plurality of lenses forming an array of lenses, said lenses aligned with said first apertures, and a second aperture array comprising a plurality of substantially round second apertures aligned with said first apertures, and positioned in the conjugate plane of the first apertures, wherein said lens system is arranged between said first aperture array and said seconds aperture array for imaging said first aperture array on said second aperture array.
A charged particle exposure apparatus for exposing a substrate to at least one charged particle beamlet, comprising a substantially round first aperture for blocking part of said charged particle beamlet, a lens system comprising at least one lens, said lens system aligned with said first aperture, a substantially round second aperture aligned with said first apertures, and positioned in the conjugate plane of the first aperture, and deflection means comprising at least one beamlet deflector for deflecting said beamlet when passing said deflector upon reception of a control signal, said lens system arranged between said first aperture and said second aperture for projecting an image of said first aperture on said second aperture, and said deflector substantially located in an image focal plane of said lens system.
A substrate processed using a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising:
A charged particle beam lithography system comprising a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising:
A charged particle beam microscopy system comprising a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising:
Dependencies are inferred from the claim text.