Ion beam apparatus and sample processing method
AssigneeHitachi, Ltd.
InventorsHiroyuki Muto, Tohru Ishitani, Yuichi Madokoro
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Abstract
For the sake of realizing high throughput and high processing position accuracy in an ion beam apparatus, two kinds of ion beams for processing are prepared of which one is a focusing ion beam for high image resolution and an edge processing ion beam of large beam current for permitting a sectional edge portion to be processed sharply, whereby high processing position accuracy can be ensured even with a large current ion beam.
Claims19
An ion beam apparatus comprising an ion beam optical system including ion generating means for generating ions, focusing means for focusing the ions generated from said ion generating means to form an ion beam, a restriction diaphragm having an opening for restricting current of said ion beam, beam deflecting means for scanning said ion beam on a sample and illuminating means for irradiating said ion beam on the sample, a sample stage for carrying the sample, secondary particle detecting means for detecting secondary particles generated from the sample under the irradiation of said ion beam, and control means for controlling said ion beam optical system, wherein said control means controls said ion beam optical system such that an ion beam for observation necessary to form a scanning ion microscope image of the sample or an ion beam for processing necessary to process the sample is formed and also controls said ion beam optical system such that when a beam current of the ion beam for processing is less than a predetermined value, a focusing/processing ion beam assuming a beam focusing state for high image resolution is formed and when the beam current of the processing ion beam is not less than the predetermined value, an ion beam for edge processing assuming a beam focusing state for permitting a sectional edge portion of the process sample to be processed sharply is formed,
- wherein said control means sets a desired processing region on a SIM image displayed on a CRT without regard to whether the focusing/processing ion beam or the edge processing ion beam is in use;
- and
- measures the beam radius of the edge processing ion beam in advance and stores a measured value in the control means
- wherein said control means, when processing with the edge processing ion beam, scans a region, obtained by automatically subtracting an amount corresponding to the stored beam radius from the set processing region, with the edge processing ion beam to thereby attain a desired high processing accuracy.
An ion beam apparatus comprising an ion beam optical system including an ion source, an objective lens for focusing an ion beam emitted from said ion source, and a scanning and deflecting unit for scanning said ion beam on a sample, and a detector for detecting secondary particles generated from the sample under the irradiation of said ion beam, and a control unit for controlling said ion beam optical system,
- wherein said control unit controls to change a focusing condition of said objective lens in accordance with a current value of said ion beam when section processing of said sample is executed;
- and
- wherein, when the current value of aid ion beam is equal to or larger than a predetermined value, said control unit sets a diameter of said ion beam to be larger than that at time when the current value of said ion beam is less than said predetermined value, and said control unit sets a scanning region of said ion beam to be narrowed in comparison with that at time when the current value of said ion beam is less than said predetermined value.
A sample processing method for executing section processing of a sample by irradiating the sample with an ion beam emitted from an ion source through an ion beam optical system, comprising:
- when the current value of said ion beam is equal to or larger than a predetermined value, setting a diameter of said ion beam to be larger than that at time when the current value of said ion beam is less than said predetermined value, and setting a scanning region of said ion beam to be narrowed in comparison with that at time when the current value of said ion beam is less than said predetermined value.
Dependencies are inferred from the claim text.