Method for forming silicon dioxide film using siloxane
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-eun Park, Kang-soo Chu, Joo-won Lee, Jong-ho Yang
Life of this patent
Estimating the term…
Abstract
A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen- or NCO-substituted siloxane is used as a Si source. The method includes feeding a substituted siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.
Claims55
A method for forming a silicon dioxide film on the surface of a substrate using a catalyst-assisted atomic layer deposition process, said method comprising the sequential steps of:
- (a) feeding a halogen- or NCO-substituted siloxane as a first reactant onto a substrate together with a first catalyst to form a chemisorbed layer comprising the first reactant;
- and
- (b) feeding a second reactant onto the chemisorbed layer together with a second catalyst to form the silicon dioxide film on the substrate.
A method for forming a silicon dioxide film on the surface of a substrate using a catalyst-assisted atomic layer deposition process, said method comprising the sequential steps of:
- (a) loading a substrate in a chamber;
- (b) introducing a siloxane compound represented by the formula SinOn−1X2n+2, where n is an integer of 2 to 5, and X is a chemical group selected from F, Cl, Br, I or NCO, as a first reactant together with a first catalyst into the chamber to produce a chemisorbed layer comprising the first reactant on the substrate;
- (c) removing at least a byproduct of step (b) from the chamber;
- (d) introducing a second reactant together with a second catalyst into the chamber to react with the chemisorbed layer on the substrate to produce a silicon dioxide film on the substrate;
- and
- (e) removing at least a byproduct of step (d) from the chamber.
A method for forming a silicon dioxide film on the surface of a substrate for semiconductor applications using a catalyst-assisted atomic layer deposition process, said method
- comprising at least the sequential steps of exposing a functionalized surface of the substrate to a first reactant mixture consisting essentially of first reactant and first catalyst and thereafter exposing that surface to a second reactant mixture consisting essentially of second reactant and second catalyst to form a silicon dioxide monolayer on the substrate surface, wherein
- the first reactant consists essentially of at least one member selected from the group consisting of halogen- and NCO-substituted siloxanes.
Dependencies are inferred from the claim text.