Lanthanide oxide dielectric layer
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
Estimating the term…
Abstract
A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic devices. The lanthanide oxide dielectric layer is formed by depositing lanthanum by atomic layer deposition onto a substrate surface using a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor. A ruthenium or a conductive ruthenium oxide gate may be formed on the lanthanide oxide dielectric layer. A ruthenium gate on a lanthanide oxide dielectric layer provides a gate structure that effectively prevents a reaction between the gate and the lanthanide oxide dielectric layer.
Claims45
A method comprising:
- forming a dielectric layer containing a lanthanide oxide layer in an integrated circuit including:
- forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor;
- and
- pulsing hydrogen with pulsing of the at least one of a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor.
A method comprising:
- forming a dielectric layer containing a lanthanide oxide layer in an integrated circuit including forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisethylcyclopentadionatolanthanum precursor;
- and
- depositing a conductive layer containing ruthenium, the conductive layer contacting the dielectric layer.
A method comprising:
- forming a memory array in a substrate including:
- forming a dielectric layer containing a lanthanide oxide layer in an integrated circuit including forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisethylcyclopentadionatolanthanum precursor and pulsing hydrogen with pulsing of the trisethylcyclopentadionatolanthanum precursor;
- and
- depositing a conductive layer containing ruthenium, the conductive layer contacting the dielectric layer;
- and
- forming an address decoder in the substrate, the address decoder coupled to the memory array.
A method comprising:
- forming a dielectric layer containing a lanthanide oxide layer in an integrated circuit including forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisdipyvaloylmethanatolanthanum precursor and pulsing hydrogen with pulsing of the trisdipyvaloylmethanatolanthanum precursor;
- and
- depositing a conductive layer containing ruthenium, the conductive layer contacting the dielectric layer.
A method comprising:
- forming a memory array in a substrate including:
- forming a dielectric layer containing a lanthanide oxide layer in an integrated circuit including forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisdipyvaloylmethanatolanthanum precursor and pulsing hydrogen with pulsing of the trisdipyvaloylmethanatolanthanum precursor;
- and
- depositing a conductive layer containing ruthenium, the conductive layer contacting the dielectric layer;
- and
- forming an address decoder in the substrate coupled to the memory array.
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, wherein the integrated circuit includes a dielectric layer contacting a conductive layer containing ruthenium, the dielectric containing a lanthanide oxide layer, wherein forming the dielectric layer contacting the conductive layer includes:
- forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisethylcyclopentadionatolanthanum precursor and pulsing hydrogen with pulsing of the trisethylcyclopentadionatolanthanum precursor;
- and
- depositing the conductive layer such that the conductive layer contacts the dielectric layer.
A method comprising:
- providing a controller;
- coupling an integrated circuit to the controller, wherein the integrated circuit includes a dielectric layer contacting a conductive layer containing ruthenium, the dielectric layer containing a lanthanide oxide layer, wherein forming the dielectric layer contacting the conductive layer includes:
- forming the lanthanide oxide layer by atomic layer deposition, the atomic layer deposition including pulsing a trisdipyvaloylmethanatolanthanum precursor and pulsing hydrogen with pulsing of the trisdipyvaloylmethanatolanthanum precursor;
- and
- depositing the conductive layer such that the conductive layer contacts the dielectric layer.
Dependencies are inferred from the claim text.