Silicon substrate apparatus and method of manufacturing the silicon substrate apparatus
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMunehito Kumagai, Yukihisa Yoshida, Tsukasa Matsuura, Yukihiro Honma
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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsMunehito Kumagai, Yukihisa Yoshida, Tsukasa Matsuura, Yukihiro Honma
Estimating the term…
A first rectangular groove having a rectangular cross section and a second rectangular groove substantially orthogonal to the first rectangular groove and having a rectangular cross section are formed in a first silicon substrate. A third rectangular groove located at a position facing the first rectangular groove and having a rectangular cross section is formed on a second silicon substrate. A device substrate including a frequency conversion device is provided in the second rectangular groove, so that the frequency conversion device is located where the first and second rectangular grooves are orthogonal to each other. Further, the first silicon substrate on which the device substrate is located is bonded to the second silicon substrate, so that the first rectangular groove opposes the third rectangular groove, forming a rectangular waveguide which includes the first rectangular groove and the third rectangular groove, and in which a received high frequency signal propagates and is incident on the frequency conversion device.
A silicon substrate apparatus comprising:
A method of manufacturing a silicon substrate apparatus including:
A method of manufacturing a silicon substrate apparatus including forming by dry etching both a first rectangular groove having a rectangular cross section, and a second rectangular groove which is substantially orthogonal to said first rectangular groove, which has a depth different from a depth of said first rectangular groove, and which has a rectangular cross section, in a silicon substrate.
Dependencies are inferred from the claim text.