# US 7,078,786 B1 · Composite series resistor having reduced temperature sensitivity in an IC chip > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,078,786 B1 - Document ID: US7078786B1 - Status: Granted - Kind: B1 - Application number: 10/843,190 - Filed: 2004-05-10 - Granted: 2006-07-18 - Earliest claimed: 2002-10-16 - Assignees: Newport Fab, LLC dba Jazz Semiconductor - Inventors: Marco Racanelli; Chun Hu; Chih-Chieh Shen - Web page: https://patentgrep.com/patent/US7078786B1 ## CPC - H10D 1/474: {comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides} - H10D 1/47: Resistors having no potential barriers - H10D 84/209: {of only resistors} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one exemplary embodiment, an integrated circuit chip comprises an oxide region. The integrated circuit chip further comprises a poly resistor having a first terminal and second terminal, where the poly resistor is situated over the oxide region. According to this exemplary embodiment, the integrated circuit chip further comprises a metal resistor having a first terminal and a second terminal, where the metal resistor is situated over the poly resistor, and where the first terminal of the metal resistor is connected to the first terminal of the poly resistor. According to this exemplary embodiment, the integrated circuit chip may further comprise a first metal segment connected to the second terminal of the metal resistor and a second metal segment connected to the second terminal of the poly resistor. The integrated circuit chip may further comprise an inter-layer dielectric situated between the poly resistor and the metal resistor. ## Claims ### Claim 1 A composite resistor in an integrated circuit chip, said composite resistor comprising: a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor; a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor; said metal resistor comprising material selected from the group consisting of titanium nitride, titanium nitride tungsten, and titanium tungsten. ### Claim 2 (depends on 1) The composite resistor of claim 1 wherein said poly resistor comprises P-type polycrystalline silicon. ### Claim 3 (depends on 1) The composite resistor of claim 1 wherein a first resistance of said composite resistor at a first temperature is substantially equal to a second resistance of said composite resistor at a second temperature. ### Claim 4 (depends on 1) The composite resistor of claim 1 wherein said metal resistor is situated in a first metal level of said integrated circuit chip. ### Claim 5 (depends on 1) The composite resistor of claim 1 wherein a first inter-layer dielectric is situated between said poly resistor and said metal resistor. ### Claim 6 (depends on 1) The composite resistor of claim 1 wherein said oxide region is a field oxide region. ### Claim 7 (depends on 1) The composite resistor of claim 1 wherein said first terminal of said composite resistor is connected to a first metal segment and said second terminal of said composite resistor is connected to a second metal segment. ### Claim 8 (depends on 7) The composite resistor of claim 7 wherein said first and said second metal segments are situated in a second metal level of said integrated circuit chip. ### Claim 9 A composite resistor in an integrated circuit chip, said composite resistor comprising: a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor; a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor; wherein said first terminal of said composite resistor is connected to a first metal segment and said second terminal of said composite resistor is connected to a second metal segment. ### Claim 10 (depends on 9) The composite resistor of claim 9 wherein said first and said second metal segments are situated in a second metal level of said integrated circuit chip. ### Claim 11 A composite resistor in an integrated circuit chip, said composite resistor comprising: a poly resistor having a first terminal and a second terminal, said poly resistor being situated over an oxide region in said integrated circuit chip, said second terminal of said poly resistor being a first terminal of said composite resistor; a metal resistor having a first terminal and a second terminal, said metal resistor being situated over said poly resistor, said first terminal of said metal resistor being connected to said first terminal of said poly resistor, said second terminal of said metal resistor being a second terminal of said composite resistor; wherein said metal resistor comprises titanium nitride.