Gallium nitride crystals and wafers and method of making
AssigneeGeneral Electric Company
InventorsMark Philip D'Evelyn, Dong-Sil Park, Steven Francis LeBoeuf, Larry Burton Rowland, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Peter Micah Sandvik
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Abstract
A GaN crystal having up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof. The GaN crystal has at least one grain having a diameter greater than 2 mm, a dislocation density less than about 104 cm−2, and is substantially free of tilt boundaries.
Claims40
A GaN crystal comprising up to about 5 mole percent of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal comprises at least one grain, wherein the at least one grain has a diameter greater than 2 mm, a dislocation density of less than about 104 cm−2, and is substantially free of tilt boundaries.
A semiconductor structure, the semiconductor structure comprising:
- a substrate, wherein the substrate comprises a GaN crystal comprising up to about 5 mole % of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal comprises at least one grain, wherein the at least one grain has a diameter of at least about 2 mm, a dislocation density of less than about 104 cm−2, and is substantially free of tilt boundaries.
A GaN crystal comprising up to about 5 mole % of at least one of aluminum, indium, and combinations thereof, wherein the GaN crystal has an infrared absorption peak at about 3175 cm−1, with an absorbance per unit thickness of greater than about 0.01 cm−1.
Dependencies are inferred from the claim text.