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US 7,078,299 B2Granted
Formation of finFET using a sidewall epitaxial layer
AssigneeAdvanced Micro Devices, Inc.
InventorsWitold P. Maszara, Jung-Suk Goo, James N. Pan, Qi Xiang
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Abstract
A method of forming a finFET transistor using a sidewall epitaxial layer includes forming a silicon germanium (SiGe) layer above an oxide layer above a substrate, forming a cap layer above the SiGe layer, removing portions of the SiGe layer and the cap layer to form a feature, forming sidewalls along lateral walls of the feature, and removing the feature.
Claims11
A method of forming a finFET using a sidewall epitaxial layer, the method comprising:
- forming a silicon germanium (SiGe) layer above an oxide layer above a substrate;
- forming a cap layer above the SiGe layer;
- removing portions of the SiGe layer and the cap layer to form a feature;
- forming sidewalls along lateral walls of the feature, wherein the sidewalls comprise epitaxially grown strained silicon;
- and
- removing the feature.
3 more elements
A method of forming structures, the method comprising:
- depositing a material layer above an oxide layer above a substrate;
- depositing a cap layer above the material layer;
- patterning the material layer and the cap layer to form a gate structure;
- forming sidewalls along lateral walls of the gate structure, wherein the sidewalls comprise epitaxially grown strained silicon;
- and
- providing a selective etch to remove the gate structure and leave the sidewalls to define structures.
3 more elements
Dependencies are inferred from the claim text.