# US 7,078,281 B2 · Method of manufacturing a semiconductor device by providing a mirror in the attenuation region > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,078,281 B2 - Document ID: US7078281B2 - Status: Granted - Kind: B2 - Application number: 10/227,922 - Filed: 2002-08-27 - Published: 2003-03-06 - Granted: 2006-07-18 - Earliest claimed: 2001-08-31 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Koichiro Tanaka; Tomoaki Moriwaka - Web page: https://patentgrep.com/patent/US7078281B2 ## CPC - H10P 34/42: with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) - B23K 26/066: by using masks - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/0229: {characterised by control of the annealing or irradiation parameters} - H10P 14/2905: {Silicon, silicon germanium or germanium} - H10P 14/2921: {being crystalline insulating materials} - H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers} - H10P 14/2923: {being conductive materials, e.g. metallic silicides} - H10P 14/3238: {being insulating materials} - H10P 14/3248: {consisting of two layers} - H10P 14/3411: {Silicon, silicon germanium or germanium} - H10P 14/381: {Beam shaping, e.g. using a mask} - H10P 14/3814: {Continuous wave laser beam} - H10P 14/3816: {Pulsed laser beam} - H10P 14/382: {Scanning of a beam} - H01S 3/005: {Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B)} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract Attenuation regions of laser light are removed or reduced in size using a slit located in the immediate vicinity of a surface to be irradiated so that a steep energy distribution is obtained in the end portions of the laser light. The reason why the slit is located in the immediate vicinity of the surface to be irradiated is to suppress the spread of the laser light. In addition, the attenuation regions of the laser light are folded by using a mirror instead of the slit to increase energy densities in the attenuation regions by one another so that a steep energy density distribution is obtained in the end portions of the laser light. ## Claims ### Claim 1 A method of manufacturing a semiconductor device comprising: converting a first energy density distribution of a laser light emitted from a laser into a second energy density distribution by a means, wherein the second energy density has an attenuation region; homogenizing an energy density in an end portion of the laser light having the second energy density distribution by providing a mirror in the attenuation region; and irradiating a surface to be irradiated with the laser light having the homogenized energy density while relatively shifting the surface to be irradiated. ### Claim 2 A method of manufacturing a semiconductor device comprising: changing a sectional shape of a laser light emitted from a laser into a first shape by a means, wherein the first shape has an elongated cross section; homogenizing an energy density distribution in an end portion of the elongated cross section of the laser light by a mirror; and irradiating a surface to be irradiated with the laser light having the homogenized energy density while relatively shifting the surface to be irradiated. ### Claim 3 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the means comprises a homogenizer located to be orthogonal to an optical axis of the laser light. ### Claim 4 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the means comprises a plurality of cylindrical lens arrays which are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions. ### Claim 5 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the means comprises a plurality of cylindrical lens groups and a lens, wherein the cylindrical lens groups are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions, and wherein the lens is located in a transmission side of the cylindrical lens groups and synthesizes the divided laser lights. ### Claim 6 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the means comprises a fly eye lens which is located to be orthogonal to an optical axis of the laser light and divides the laser light. ### Claim 7 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the means comprises a fly eye lens and a spherical lens, wherein the fly eye lens is located to be orthogonal to an optical axis of the laser light and divides the laser light, and wherein the spherical lens is located in a transmission side of the fly eye lens and synthesizes the divided laser lights. ### Claim 8 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the end portion of the laser light is a region parallel to a shift direction of the laser light. ### Claim 9 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the laser comprises at least one selected from the group consisting of a continuous oscillation solid laser, a continuous oscillation gas laser, a pulse oscillation solid laser, and a pulse oscillation gas laser. ### Claim 10 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the laser comprises at least one selected from the group consisting of a YAG laser, a YVO4 laser, a YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser. ### Claim 11 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the laser is one selected from the group consisting of an excimer laser, an Ar laser, and a Kr laser. ### Claim 12 (depends on 1, 2) A method of manufacturing a semiconductor device according to any one of claim 1 or 2, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a projector, a portable telephone, and an electronic book. ### Claim 13 A method of manufacturing a semiconductor device comprising: forming a semiconductor film over a substrate; converting a first energy density distribution of a laser light emitted from a laser into a second energy density distribution by a means, wherein the second energy density has an attenuation region; homogenizing an energy density in an end portion of the laser light having the second energy density distribution by providing a mirror in the attenuation region; and irradiating the semiconductor film with the laser light having the homogenized energy density while relatively shifting the semiconductor film. ### Claim 14 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the means comprises a homogenizer located to be orthogonal to an optical axis of the laser light. ### Claim 15 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the means comprises a plurality of cylindrical lens arrays which are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions. ### Claim 16 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the means comprises a plurality of cylindrical lens groups and a lens, wherein the cylindrical lens groups are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions, and wherein the lens is located in a transmission side of the cylindrical lens groups and synthesizes the divided laser lights. ### Claim 17 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the means comprises a fly eye lens which is located to be orthogonal to an optical axis of the laser light and divides the laser light. ### Claim 18 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the means comprises a fly eye lens and a spherical lens, wherein the fly eye lens is located to be orthogonal to an optical axis of the laser light and divides the laser light, and wherein the spherical lens is located in a transmission side of the fly eye lens and synthesizes the divided laser lights. ### Claim 19 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the end portion of the laser light is a region parallel to a shift direction of the laser light. ### Claim 20 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the laser comprises at least one selected from the group consisting of a continuous oscillation solid laser, a continuous oscillation gas laser, a pulse oscillation solid laser, and a pulse oscillation gas laser. ### Claim 21 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the laser comprises at least one selected from the group consisting of a YAG laser, a YVO4 laser, a YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser. ### Claim 22 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the laser is one selected from the group consisting of an excimer laser, an Ar laser, and a Kr laser. ### Claim 23 (depends on 13) A method of manufacturing a semiconductor device according to claim 13, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a projector, a portable telephone, and an electronic book. ### Claim 24 A method of manufacturing a semiconductor device comprising: forming a semiconductor film over a substrate; changing a sectional shape of a laser light emitted from a laser into a first shape by a means, wherein the first shape has an elongated cross section; homogenizing an energy density distribution in an end portion of the elongated cross section of the laser light by a mirror; and irradiating the semiconductor film with the laser light having the homogenized energy density distribution while relatively shifting the semiconductor film. ### Claim 25 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the means comprises a homogenizer located to be orthogonal to an optical axis of the laser light. ### Claim 26 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the means comprises a plurality of cylindrical lens arrays which are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions. ### Claim 27 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the means comprises a plurality of cylindrical lens groups and a lens, wherein the cylindrical lens groups are arranged in parallel so as to be orthogonal to an optical axis of the laser light and divide the laser light in the arrangement directions, and wherein the lens is located in a transmission side of the cylindrical lens groups and synthesizes the divided laser lights. ### Claim 28 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the means comprises a fly eye lens which is located to be orthogonal to an optical axis of the laser light and divides the laser light. ### Claim 29 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the means comprises a fly eye lens and a spherical lens, wherein the fly eye lens is located to be orthogonal to an optical axis of the laser light and divides the laser light, and wherein the spherical lens is located in a transmission side of the fly eye lens and synthesizes the divided laser lights. ### Claim 30 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the end portion of the laser light is a region parallel to a shift direction of the laser light. ### Claim 31 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the laser comprises at least one selected from the group consisting of a continuous oscillation solid laser, a continuous oscillation gas laser, a pulse oscillation solid laser, and a pulse oscillation gas laser. ### Claim 32 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the laser comprises at least one selected from the group consisting of a YAG laser, a YVO4 laser, a YLF laser, a YAlO3 laser, a glass laser, a ruby laser, an alexandrite laser, and a Ti: sapphire laser. ### Claim 33 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the laser is one selected from the group consisting of an excimer laser, an Ar laser, and a Kr laser. ### Claim 34 (depends on 24) A method of manufacturing a semiconductor device according to claim 24, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a projector, a portable telephone, and an electronic book.