Method for atomic layer deposition (ALD) of silicon oxide film
AssigneeSamsung Electronics Co., Ltd.
InventorsByoung Ha Cho, Yong Il Kim, Cheol Ho Shin, Won Hyung Lee, Jung Soo Kim, Sang Tae Sim
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Abstract
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a Si2Cl6 source unlike a conventional atomic layer deposition process using a SiCl4 source. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
Claims23
In a method for forming a silicon oxide film on a surface of a substrate using an atomic layer deposition (ALD) process, the improvement comprising the sequential steps of:
- (a) exposing a substrate having —OH groups adsorbed on a surface thereof to a first catalyst suitable for activating at least a portion of the hydrogen of the —OH groups;
- (b) simultaneously with and/or following step (a), exposing the substrate surface to a first source of hexachloro disilane (Si2Cl6) to form an oxygen/silicon/chlorine complex along the substrate surface;
- (c) following step (b), exposing the substrate surface to a second catalyst suitable for activating at least a portion of the chlorine in the oxygen/silicon/chlorine complex along the substrate surface;
- and,
- (d) following step (c), exposing the substrate surface to an oxygen source to react with the activated chlorine to form a silicon oxide layer consisting essentially of silicon dioxide with —OH groups along the substrate surface.
A method for forming a silicon oxide film on a substrate in a reaction chamber, said method comprising the steps of:
- (a) exposing a substrate having —OH groups adsorbed on a surface thereof to a first catalyst to activate a hydrogen portion of the —OH groups;
- (b) exposing the surface of the substrate to a first source of Si2Cl6 to perform a reaction in which oxygen/silicon/chlorine complexes of the form —O—Si2Cl5 and/or —O—Si2Cl4 are formed;
- (c) exposing the surface of the substrate to a second catalyst to activate chlorine in the oxygen/silicon/chlorine complexes;
- and,
- (d) exposing the surface of the substrate to an oxygen source to perform a reaction in which the activated chlorine reacts to leave a surface layer consisting essentially of silicon dioxide with —OH groups adsorbed thereon.
In a method for forming a silicon oxide film on a surface of a substrate in a reaction chamber using an atomic layer deposition (ALD) process, the improvement comprising the sequential steps of:
- (a) exposing a substrate having —OH groups adsorbed on a surface thereof to a first catalyst suitable for activating at least a portion of the hydrogen of the —OH groups;
- (b) simultaneously with and/or following step (a), exposing the substrate surface to a first source of hexachloro disilane (Si2Cl6) to form an oxygen/silicon/chlorine complex along the substrate surface;
- (c) following step (b), exposing the substrate surface to a second catalyst suitable for activating at least a portion of the chlorine in the oxygen/silicon/chlorine complex along the substrate surface;
- and,
- (d) following step (c), exposing the substrate surface to an oxygen source to react with the activated chlorine to form a silicon oxide layer consisting essentially of silicon dioxide with —OH groups along the substrate surface;
- (e) repeating steps (a) to (d) one or more additional times to form a silicon oxide thin film comprising multiple atomic layers, each consisting essentially of silicon dioxide;
- and,
- (f) performing in-situ cleaning of the reaction chamber at a temperature of about 50° C. to about 200° C.
Dependencies are inferred from the claim text.