Light emitting device methods
AssigneeLuminus Devices, Inc.
InventorsAlexei A. Erchak, John W. Graff, Michael Gregory Brown, Scott W. Duncan, Milan S. Minsky
Life of this patent
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Abstract
A method includes disposing a planarization layer on a surface of a layer of semiconductor material and disposing a lithography layer on a surface of the planarization layer. The method also includes performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern.
Claims118
A method of making a light-emitting device, the method comprising:
- disposing a planarization layer on a surface of a layer of semiconductor material;
- disposing a lithography layer on a surface of the planarization layer;
- performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern;
- after removing portions of the lithography and planarization layers, depositing a material on exposed portions of the layer of semiconductor material;
- depositing the material on an exposed upper surface of the lithography layer;
- removing the portions of lithography layer having the material deposited thereon;
- and
- removing portions of the layer of semiconductor material that do not have the material deposited thereon to form the pattern in the surface of the layer of semiconductor material.
A method of making a light-emitting device, the method comprising:
- providing an article that comprises a layer of semiconductor material, a planarization layer supported by the layer of semiconductor material, and a lithography layer supported by the planarization layer;
- and
- performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer, and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern;
- after removing portions of the lithography and planarization layers, depositing a material on exposed portions of the layer of semiconductor material;
- depositing the material on an exposed upper surface of the lithography layer;
- removing the portions of lithography layer having the material deposited thereon;
- and
- removing portions of the layer of semiconductor material that do not have the material deposited thereon to form the pattern in the surface of the layer of semiconductor material.
A method of making a light-emitting device, the method comprising:
- disposing a planarization layer on a surface of a layer of semiconductor material;
- disposing a lithography layer on a surface of the planarization layer;
- and
- performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern;
- wherein performing nanolithography includes forming indentations in the lithography layer, and the method further comprises coating at least some of the indentations in the lithography layer with an etch resistant material.
A method of making a light-emitting device, the method comprising:
- disposing a planarization layer on a surface of a layer of semiconductor material;
- disposing a lithography layer on a surface of the planarization layer;
- performing nanolithography to remove at least a portion of the planarization layer, at least a portion of the lithography layer and at least a portion of the layer of semiconductor material, thereby forming a dielectric function in the surface of the layer of semiconductor material that varies spatially according to a pattern;
- after removing portions of the lithography and planarization layers, depositing a material on exposed portions of the layer of semiconductor material;
- depositing the material on an exposed upper surface of the lithography layer;
- removing the portions of lithography layer having the material deposited thereon;
- and
- removing the portions of the planarization layer corresponding to the portions of the lithography layer having the material deposited thereon.
Dependencies are inferred from the claim text.