Method for determining cell body and biasing plate contact locations for embedded dram in SOI
AssigneeInternational Business Machines Corporation
InventorsKaren A. Bard, Herbert L. Ho
Life of this patent
Estimating the term…
Abstract
A method for determining contact location for embedded dynamic random access memory (eDRAM) formed in a silicon-on-insulator (SOI) substrate includes reviewing contact design data for an eDRAM device and discarding contact locations corresponding to contact shapes within a support area of the eDRAM device. Contact locations corresponding to bitline contacts to storage cells within the eDRAM device are saved and outputted to a custom design level to be used in forming body contacts for the eDRAM formed in the SOI substrate.
Claims10
A method for determining contact location for embedded dynamic random access memory (eDRAM) formed in a silicon-on-insulator (SOI) substrate, the method comprising:
- reviewing contact design data for an eDRAM device;
- discarding contact locations corresponding to contact shapes within a support area of said eDRAM device;
- saving contact locations corresponding to bitline contacts to storage cells within said eDRAM device;
- and
- outputting said saved contact locations to a custom design level to be used in forming body contacts for the eDRAM formed in the SOI substrate.
A method for determining body contact location and biasing plate contact location for embedded dynamic random access memory (eDRAM) formed in a silicon-on-insulator (SOI) substrate, the method comprising:
- reviewing contact design data for a bulk eDRAM device;
- discarding contact locations corresponding to contact shapes within a support area of said eDRAM device;
- saving contact locations corresponding to bitline contacts to storage cells within said bulk eDRAM device;
- saving contact locations corresponding to eDRAM p-well contacts within said bulk eDRAM device;
- saving contact locations corresponding to eDRAM n-band contacts within said bulk eDRAM device;
- and
- using said saved contact locations to design a mask for creating body contacts and biasing plate contacts for the eDRAM formed in the SOI substrate.
Dependencies are inferred from the claim text.