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AssigneeInfinera Corporation
InventorsRadhakrishnan L. Nagarajan, Andrew G. Dentai, Fred A. Kish, Jr.
Estimating the term…
The Group III–V quaternary, InAlGaAs is employed as a waveguide layer in optical components, such as In-P based array waveguide gratings (AWGs), avalanche photodiodes (APDs) or other optical components that contain a waveguide core in the InP regime. The deployment of InAlGaAs waveguides provides for high uniform photoluminescent (PL) emission wavelength across the wafer for InAlGaAs waveguides as compared to InGaAsP waveguides as now commonly employed in such optical devices or components. The use of an InAlGaAs waveguide core has particular utility when deployed in a photonic integrated circuit (PIC) such as an AWG with a plurality of outputs optically integrated with a plurality of photodetectors, such as APDs which are exemplified in this disclosure. In lieu of an InAlGaAs waveguide, combination layers of InGaAs/InAlAs, InGaAs/InAlGaAs or InAlAs/InAlGaAs may be employed or stacks of such layers to form the waveguides in the PIC chip.
A photonic integrated circuit (PIC) formed in a chip a plurality of such chips are formed in an InP-based wafer, each chip comprising a plurality of sequentially coupled, monolithic InP-based optical components forming the integrated circuit having an input to or an output from the circuit or both and including a Al-containing waveguide core extending through the sequentially coupled optical components to provide a common waveguide core where optical components in the circuit contain a different section of the waveguide core, the Al-containing waveguide core comprising InAlGaAs, combined layers of InGaAs/InAlAs, InGaAs/InAlGaAs or InAlAs/InAlGaAs or stacks of such layers in lieu of InGaAsP so that a birefringence variation, expressed as ΔλTE-TM, for InAlGaAs (±1 nm) is about ±3 GHz whereas the birefringence variation for InGaAsP (±10 nm) is about ±30 GHz, the deployment of the aluminum-containing waveguide core results in higher bandgap uniformity across the waveguide core-sequentially coupled optical components in the photonic integrated circuit (PIC) compared to InGaAsP-based waveguide cores that extend beyond a single optical component and providing for high uniform photoluminescent (PL) emission wavelength across the InP-based wafer from which the chips were part thereof.
A photonic integrated circuit (PIC) chip wherein a plurality of such chips are formed in an InP-based wafer:
An avalanche photodiode (APD) comprising:
An avalanche photodiode (APD) comprising:
Dependencies are inferred from the claim text.