Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
AssigneeFurukawa Electric Co., Ltd.
InventorsYutaka Ohki, Naoki Tsukiji, Junji Yoshida
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AssigneeFurukawa Electric Co., Ltd.
InventorsYutaka Ohki, Naoki Tsukiji, Junji Yoshida
Estimating the term…
The present invention has a lower cladding layer, a lower SCH layer, a quantum well layer, an upper SCH layer, and a first upper cladding layer sequentially laminated on a substrate. A striped-pattern second upper cladding layer that has a longitudinal direction in a laser beam emission direction, and a current blocking layer are laminated on the first upper cladding layer. A third upper cladding layer and a contact layer are laminated sequentially on the second upper cladding layer and the current blocking layer respectively. The current blocking layer has a conduction type different from that of the second upper cladding layer. An effective index of an area that includes the current blocking layer is lower than the same of an area that includes the upper cladding layer.
A semiconductor laser device, comprising:
A semiconductor laser device comprising:
A semiconductor laser device comprising:
Dependencies are inferred from the claim text.