Ridge-type semiconductor laser element fabrication method

A ridge-type semiconductor laser device fabrication method, comprising the steps of:

• sequentially stacking a lower cladding layer of a first conductivity type, an active layer, and a first upper cladding layer of a second conductivity type different from said first conductivity type on a compound semiconductor substrate of said first conductivity type;
• forming a ridge-shaped second upper cladding layer of said second conductivity type on said first upper cladding layer;
• using a Group III element feedstock that contains Group III element compounds with a methyl group to selectively grow current blocking layers alongside said ridge-shaped second upper cladding layer, said current blocking layers each having a single layer structure which changes conductivity type only in a lateral direction such that respective sections of said current blocking layers that follow the sides of said second upper cladding layer are of said second conductivity type, and respective sections of said current blocking layers that follow said first upper cladding layer are of said first conductivity type;
• and
• forming a contact layer of said second conductivity type on said second upper cladding layer and on the current blocking layers alongside the second upper cladding layer.