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US 7,072,238 B2Granted
Semiconductor device capable of generating ripple-free voltage internally
AssigneeSamsung Electronics Co., Ltd.
InventorsDong-Hyuk Chae, Young-Ho Lim
Life of this patent
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Abstract
A semiconductor device that generates a regulated high voltage. The device includes, a high voltage generation circuit for supplying a high voltage to the first power line, a current bypass circuit for supplying current to a second power line from the first power line, a PMOS transistor coupled between a first power line and the second power line, and a controller for controlling the drive current of the PMOS transistor in response to the voltage on the second power line.
Claims17
A semiconductor device comprising:
- a first power line and a second power line,
- a high voltage generator circuit for supplying a high voltage to said first power line;
- a current bypass circuit for supplying current to said second power line from the first power line until the voltage difference between said power lines reaches a first target value;
- a first PMOS transistor coupled between said first power line and said second power line, said PMOS transistor operating in response to a PMOS drive current;
- and
- a controller for controlling said PMOS drive current in response to the voltage on said second power line,
- whereby said current bypass circuit is cut off when said high voltage reaches said target first value, and current is supplied to said second power line through said PMOS transistor until the voltage on said second power line reaches a second target voltage lower than said first target voltage.
4 more elements
A semiconductor device comprising:
- a first power line;
- a second power line;
- a high voltage generator circuit for generating a high voltage on said first power line;
- a voltage regulator circuit for regulating the voltage on said second power line;
- wherein the voltage regulator circuit comprises:
- a first PMOS transistor coupled between the first and second power lines;
- said PMOS transistor operating in response to a PMOS drive current;
- a current bypass circuit for supplying current to the second power line from the first power line;
- and
- a controller for controlling said PMOS drive current in response to the voltage on said second power line.
7 more elements
A semiconductor device comprising:
- a first power line;
- a second power line;
- a high voltage generator circuit for outputting a high voltage to the first power line;
- first and second diode-coupled NMOS transistors coupled between said first power line and said second power line;
- a first PMOS transistor coupled between said first and second power lines;
- a second PMOS transistor coupled said first power line, said second PMOS transistor and said first PMOS transistor constituting a current mirror, said second PMOS transistor having a drain,
- a current source;
- an NMOS transistor coupled between said drain of said second PMOS transistor and said current source, said NMOS transistor having a gate adapted to receive a gate voltage;
- a voltage dividing unit for dividing the voltage on the second power line to generate a divide voltage;
- and
- a comparing unit for controlling said gate voltage of said NMOS transistor depending on whether said divide voltage is lower than a reference voltage.
8 more elements
Dependencies are inferred from the claim text.