Back to results
US 7,072,235 B2Granted
Bias sensing in DRAM sense amplifiers through coupling and decoupling device
AssigneeMicron Technology, Inc.
InventorsStephen L Casper, David J McElroy
Life of this patent
Estimating the term…
Abstract
Voltage coupling/decoupling devices are provided within DRAM devices for improving the bias sensing of sense amplifiers and thus the refresh performance. The voltage coupling/decoupling devices couple or decouple bias voltage from corresponding digit lines coupled to the sense amplifiers. By coupling and decoupling voltage from the digit lines, the time interval between refresh operations can be increased.
Claims23
A memory device comprising:
- a plurality of memory cells;
- a plurality of digit lines wherein each digit line is coupled to at least one of said memory cells;
- a plurality of sense amplifiers wherein each sense amplifier is coupled to at least one of said memory cells;
- and
- a voltage coupling/decoupling device having an output coupled to a first of said digit lines, wherein said voltage device couples voltage onto or decouples voltage from said first digit line after one of said memory cells is accessed and before one of said sense amplifiers is fired, said one sense amplifier coupled to said one memory cell.
2 more elements
A memory device comprising:
- a memory cell;
- a digit line coupled to said memory cell;
- a sense amplifier coupled to said memory cell via said digit line;
- and
- a voltage coupling/decoupling device having an output coupled to said digit line wherein said voltage device couples voltage onto said digit line after said memory cell is accessed and before said sense amplifier is fired.
2 more elements
A memory device comprising:
- a memory cell;
- a sense amplifier coupled to said memory cell;
- a digit line coupled to said sense amplifier;
- and
- a voltage coupling/decoupling device having an output coupled to said digit line wherein said voltage device decouples voltage from said digit line after said memory cell is accessed and before said sense amplifier is fired.
2 more elements
A method of operating a memory device, said method comprising:
- applying a same voltage to first and second digit lines;
- accessing an electrical charge stored within a memory cell via said first digit line, said accessing resulting in said first digit line having a first digit line bias voltage;
- capacitively decoupling a voltage from said second digit line to generate a second digit line bias voltage;
- and
- restoring electrical charge in said memory cell to a predetermined level.
2 more elements
A method of operating a memory device, said method comprising:
- applying a same voltage to first and second digit lines;
- accessing an electrical charge stored within a memory cell via said first digit line, said accessing resulting in said first digit line having a first digit line bias voltage;
- capacitively coupling a voltage onto said first digit line to generate an increased first digit line bias voltage;
- and
- restoring electrical charge in said memory cell to a predetermined level.
2 more elements
Memory apparatus comprising:
- means for applying a same voltage to first and second digit lines;
- means for accessing an electrical charge stored in a memory cell coupled to said first digit line;
- means for creating or increasing a voltage difference between said first and second digit lines wherein said second digit line voltage is lower than said first digit line voltage;
- and
- means for restoring said electrical charge in said memory cell to a predetermined level in response to said voltage difference reaching a threshold.
2 more elements
An electronic system comprising:
- a processor;
- a memory controller;
- a memory circuit comprising:
- at least one memory cell,
- a sense amplifier coupled to said one memory cell,
- at least two digit lines, one of said two digit lines coupled to said memory cell and both of said two digit lines coupled to said sense amplifier, and
- a voltage coupling/decoupling device having an output coupled to one of said two digit lines, said voltage device capacitively coupling voltage onto or decoupling voltage from said one of said two digit lines after said memory cell is accessed and before said sense amplifier is fired;
- and
- a plurality of signal buses coupling said processor to said memory controller and said memory controller to said memory circuit.
6 more elements
Dependencies are inferred from the claim text.