Magnetic memory having synthetic antiferromagnetic pinned layer

A method of producing a magnetic memory element, the method comprising:

• forming a sense structure;
• providing a tunnel barrier adjacent the sense structure;
• and
• providing a pinned structure adjacent the tunnel barrier on a side opposite the sense structure, the pinned structure including an antiferromagnetic structure provided adjacent a ferromagnetic layer, the ferromagnetic layer functioning to impart minimal textural variations on the antiferromagnetic structure.

A magnetic tunnel junction device having memory elements comprising:

• a sense structure;
• a tunnel barrier adjacent the sense structure;
• and
• a pinned structure adjacent the tunnel barrier on a side opposite the sense structure, the pinned structure including an antiferromagnetic structure adjacent a ferromagnetic structure, the ferromagnetic structure being free of cobalt and providing a texture having minimal variations, the ferromagnetic layer functioning to reduce dispersion of a pinning field of the antiferromagnetic structure as compared to an antiferromagnetic structure provided on a cobalt-containing ferromagnetic layer.

A magnetic memory including an array of memory elements, each memory element comprising a magnetic memory element including:

• a sense structure;
• a tunnel barrier adjacent the sense structure;
• and
• a pinned structure adjacent the tunnel barrier on a side opposite the sense structure, the pinned structure including an antiferromagnetic structure adjacent a non-cobalt containing ferromagnetic structure, the ferromagnetic structure being cobalt-free and providing a texture to the antiferromagnetic structure that reduces dispersion of a magnetic pining field as compared to an antiferromagnetic structure provided on a cobalt-containing ferromagnetic structure.

A processor system comprising:

• a processor;
• and
• a magnetic random access memory device for exchanging data with the processor, the memory device comprising an array of memory elements, each memory element comprising a magnetic memory element including:
• a sense structure;
• a tunnel barrier adjacent the sense structure;
• and
• a pinned structure adjacent the tunnel barrier on a side opposite the sense structure, the pinned structure including an antiferromagnetic structure adjacent a ferromagnetic structure, the ferromagnetic structure being cobalt-free and providing a surface having minimal texture variation to the antiferromagnetic structure.

A method of forming a magnetic tunnel junction element comprising:

• forming a sense structure;
• providing a tunnel barrier adjacent the sense structure;
• and
• providing a pinned structure adjacent the tunnel barrier on a side opposite the sense structure, the pinned structure including an antiferromagnetic structure provided adjacent a ferromagnetic structure, the ferromagnetic structure functioning to impart minimal textural variations on the antiferromagnetic structure.

A magnetic memory element comprising:

• a first layered structure with a magnetic moment orientation that can be changed;
• a second layered structure with a fixed magnetic moment orientation;
• and
• a barrier structure between the first and second layered structures, the second layered structure including:
• a cobalt-containing ferromagnetic layer that meets the barrier structure at a first interface at which tunneling magnetoresistance occurs;
• an antiferromagnetic layer;
• and
• a cobalt-free ferromagnetic layer between the cobalt-containing ferromagnetic layer and the antiferromagnetic layer, the cobalt-free ferromagnetic layer meeting the antiferromagnetic layer at a second interface having uniform crystallographic order.

A method of producing a magnetic memory element, the method comprising:

• forming a first layered structure with a magnetic moment orientation that can be changed;
• forming a barrier structure over the first layered structure;
• forming a cobalt-containing ferromagnetic layer on the barrier structure, the cobalt-containing ferromagnetic layer meeting the barrier structure at a first interface at which tunneling magnetoresistance occurs;
• forming a cobalt-free ferromagnetic layer over the cobalt-containing ferromagnetic layer;
• and
• forming an antiferromagnetic layer on the cobalt-free ferromagnetic layer, the antiferromagnetic layer meeting the cobalt-free ferromagnetic layer at a second interface having uniform crystallographic order;
• the cobalt-containing and cobalt-free ferromagnetic layers having a fixed magnetic moment orientation.