Hybrid switch cell and memory device using the same

Abstract

A nonvolatile memory device features a hybrid switch cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a hybrid switch. The hybrid switch cell comprises a ferroelectric capacitor and a hybrid switch. The ferroelectric capacitor, located where a word line and a bit line are crossed, stores values of logic data. The hybrid switch is connected between the ferroelectric capacitor and the bit line and selectively switched depending on voltages applied to the word line. The nonvolatile memory device using a hybrid switch cell comprises a plurality of hybrid switch cell arrays, a plurality of word line driving units and a plurality of sense amplifiers. Each of the plurality of hybrid switch cell arrays each includes a single hybrid switch cell where a word line and a bit line are crossed. The plurality of word line driving units selectively drive the word line. The plurality of sense amplifiers sense and amplify data transmitted through the bit line.

Dependencies are inferred from the claim text.