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US 7,072,168 B2Granted
Capacitor device and method of manufacturing the same
AssigneeShinko Electric Industries Co., Ltd.
InventorsYasuyoshi Horikawa, Tomoo Yamasaki, Kiyoshi Ooi
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Abstract
A capacitor device of the present invention includes a substrate, a float electrode formed on the substrate, a valve metal film formed on the float electrode, a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film, and a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.
Claims14
A capacitor device comprising:
- a substrate;
- a float electrode formed on or over the substrate;
- a valve metal film formed on the float electrode;
- a dielectric film formed on the valve metal film by applying an anodic oxidation to a part of the valve metal film;
- and
- a pair of electrodes provided in areas overlapping with two different parts of the float electrode on the dielectric film respectively.
3 more elements
A method of manufacturing a capacitor device comprising the steps of:
- forming a first conductive film on or over a substrate;
- forming a valve metal film on the first conductive film;
- forming a dielectric film by applying an anodic oxidation to a part of the valve metal film;
- forming a dielectric film/valve metal film pattern by patterning the dielectric film and the valve metal film;
- forming a float electrode under the dielectric film/valve metal film pattern by patterning the first conductive film;
- and
- forming a pair of electrodes on the dielectric film/valve metal film pattern in areas overlapping with two different parts of the float electrode respectively.
4 more elements
Dependencies are inferred from the claim text.