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US 7,071,910 B1Granted
Electrooptical device and method of driving and manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYasuhiko Takemura
Life of this patent
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Abstract
An electro-optical liquid crystal display suitable for displaying highly graded images. A plurality of pixels are arranged in a matrix and supplied with data signals through data lines extending in the column direction. Extending in the row direction are a plurality of addressing lines and a plurality of voltage signal lines. Each row is selected by activating by each of the addressing lines and supplied with a driving voltage from each of the voltage supplying lines.
Claims54
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line:
- formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode farmed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line:
- formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
9 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate;
- wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line:
- to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
10 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate:
- wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply lint;
- to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
10 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line:
- formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
9 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply, line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than :a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line:
- to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode farmed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line;
- to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate;
- wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying a voltage from said voltage supply line to said pixel electrode for a period during one frame, wherein said period is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage:
- supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
9 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving, circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage:
- supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
9 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage;
- supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
9 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage;
- supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said;
- a surface smoothing film formed over said first and second thin film transistors;
- a pixel electrode formed over said surface smoothing film wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first an second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tons of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- a driving circuit formed over said substrate for driving at least one of said first and second thin film transistors, said driving circuit comprising a third thin film transistor wherein a channel region of said third thin film transistor comprises crystalline silicon,
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line a second bottom gate type thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
6 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- and
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first top-gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second top-gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first bottom gate type thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second bottom gate type thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a gate of said second thin film transistor is electrically connected to said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is connected to said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage:
- supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
8 more elements
An operation method of an active matrix display device comprising:
- a substrate having an insulating surface;
- a first signal line extending over said substrate;
- a first thin film transistor having a channel region comprising crystalline silicon and a first pair of impurity regions formed over said substrate wherein a gate of said first thin film transistor is connected to said first signal line;
- a second signal line extending across said first signal line;
- a second thin film transistor having a channel region comprising crystalline silicon and a second pair of impurity regions formed over said substrate wherein a signal is applied to a gate of said second thin film transistor from said second signal line through at least said first thin film transistor;
- a voltage supply line formed over said substrate;
- a pixel electrode formed over said substrate wherein said pixel electrode is supplied with a voltage from said voltage supply line through at least said second thin film transistor;
- and
- wherein a channel width of said second thin film transistor is larger than a channel width of said first thin film transistor,
- said method comprising a step of applying one or more pulses from said voltage supply line to said pixel electrode during one frame wherein a number of pulses applied to said pixel electrode during one frame is determined in accordance with a desired tone of a display.
7 more elements
The method according to claim wherein each of said first and second thin film transistors is a bottom-gate transistor.
Dependencies are inferred from the claim text.