Film bulk acoustic wave resonator wafer and method of fabricating a film bulk acoustic wave resonator

Abstract

A film bulk acoustic wave resonator wafer of the present invention prevents electric discharge from occurring in the process of fabricating a film bulk acoustic wave resonator, thereby enhancing product reliability and yield. The film bulk acoustic wave resonator wafer of the present invention comprises a substrate, a lower electrode and an upper electrode provided on the substrate and a piezoelectric film provided between the lower electrode and upper electrode. The lower electrode and upper electrode are shorted through a window provided in the piezoelectric film. Since the lower electrode and upper electrode are therefore kept at the same potential, no electric discharge passing through the piezoelectric film occurs even during the formation of a protective film covering the upper electrode, dicing of the substrate and other processes in which discharge has heretofore been likely to occur.

Dependencies are inferred from the claim text.