Chip-type sensor against ESD and stress damages and contamination interference

A chip-type sensor against ESD and stress damages and contamination interference, the chip-type sensor comprising:

• a substrate structure;
• and
• a protection layer covering over the substrate structure, wherein the protection layer is entirely immovable relative to the substrate structure and comprises, from bottom to top:
• a first layer for providing a first stress against the substrate structure;
• a second layer for providing a second stress against the substrate structure;
• and
• a third layer for providing a third stress against the substrate structure, wherein the first stress and the third stress belong to one of a tensile stress and a compressive stress, and the second stress belongs to the other of the tensile stress and the compressive stress, wherein:
• the substrate structure comprises:
• a silicon substrate having a plurality of sense circuits;
• and a plurality of sense electrodes, which is arranged in an array on the silicon substrate, corresponds to the sense circuits, and electrically connected to the sense circuits, respectively;
• each of the sense electrodes forms a sense result with a finger, and the sense result is sensed by the chip-type sensor;
• and
• the protection layer further comprises a polymeric material or ceramic atomic layer applied onto the third layer to provide a hydrophobic and lipophobic surface, which is to be in contact with the finger, so as to prevent a latent fingerprint from being formed thereon.