Stacked-die extension support structure and method thereof

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with opposite first and second rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, with the spacer overhanging at least one side of the first semiconductor die;
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads;
• and
• an adhesive layer on the inactive surface of the second semiconductor die.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with opposite first and second rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, with the spacer overhanging at least one side of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads, wherein the respective edges of the spacer are under the at least one row of bond pads of the second semiconductor die.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with opposite first and second rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, with the spacer overhanging at least one side of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads, wherein a length of the spacer is equal to a width of the second semiconductor die.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with opposite first and second rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, with the spacer overhanging at least one side of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads, wherein a length of the spacer is slightly less than a width of the second semiconductor die.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with opposite first and second rows of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a means for supporting formed of a rigid material, the means for supporting coupled to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, the means for supporting overhanging at least one side of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the means for supporting, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads.

A method comprising:

• coupling an inactive surface of a first semiconductor die to a first surface of a substrate, the first semiconductor die further comprising an active surface with opposite first and second rows of bond pads;
• coupling a spacer to the active surface of the first semiconductor die entirely within the first and second rows of bond pads of the first semiconductor die, the spacer overhanging at least one side of the first semiconductor die;
• coupling an inactive surface of a second semiconductor die to the spacer, the second semiconductor die further comprising an active surface larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads;
• and
• supporting the second semiconductor die with the spacer during wirebonding to the at least one row of bond pads of the second semiconductor die.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with a single row of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer formed of a rigid material, the spacer coupled to the active surface of the first semiconductor die and positioned on the first semiconductor die so as to not overlap the single row of bond pads on the first semiconductor die, the spacer overhanging at least one side of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with a single row of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die and positioned on the first semiconductor die so as to not overlap the single row of bond pads on the first semiconductor die, wherein the spacer overhangs three sides of the first semiconductor die;
• and
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads.

A structure comprising:

• a substrate comprising a first surface;
• a first semiconductor die comprising an active surface with a single row of bond pads, and an opposite inactive surface attached to the first surface of the substrate;
• a spacer coupled to the active surface of the first semiconductor die and positioned on the first semiconductor die so as to not overlap the single row of bond pads on the first semiconductor die, the spacer overhanging at least one side of the first semiconductor die;
• a second semiconductor die comprising an active surface and an opposite inactive surface coupled to the spacer, the active surface of the second semiconductor die larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads;
• and
• an adhesive layer on the inactive surface of the second semiconductor die.

A method comprising:

• coupling an inactive surface of a first semiconductor die to a first surface of a substrate, the first semiconductor die further comprising an active surface with a single row of bond pads;
• coupling a spacer formed of a rigid material to the active surface of the first semiconductor die, the spacer being positioned on the first semiconductor die so as to not overlap the single row of bond pads of the first semiconductor die, the spacer overhanging at least one side of the first semiconductor die;
• and
• coupling an inactive surface of a second semiconductor die to the spacer, the second semiconductor die further comprising an active surface larger in area than the active surface of the first semiconductor die, the active surface of the second semiconductor die with at least one row of bond pads.