Loading patent…
AssigneeAdvanced Micro Devices, Inc.
InventorsDarrell M. Erb, Steven Avanzino, Christy Mei-Chu Woo
Estimating the term…
The electromigration and stress migration of Cu interconnects is significantly reduced by forming a composite capping layer comprising a layer of β-Ta on the upper surface of the inlaid Cu, a layer of tantalum nitride on the β-Ta layer and a layer of α-Ta on the tantalum nitride layer. Embodiments include forming a recess in an upper surface of Cu inlaid in a dielectric layer, depositing a layer of β-Ta at a thickness of 25 Å to 40 Å, depositing a layer of tantalum nitride at a thickness of 20 Å to 100 Å and then depositing a layer of α-Ta at a thickness of 200 Å to 500 Å. Embodiments further include forming an overlying dielectric layer, forming an opening therein, e.g., a via opening or a dual damascene opening, lining the opening with α-Ta, and filling the opening with Cu in electrical contact with the underlying inlaid Cu.
A semiconductor device comprising:
A method of manufacturing a semiconductor device, the method comprising:
A semiconductor device comprising:
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.