Design of beol patterns to reduce the stresses on structures below chip bondpads

A method for forming a stress diverting semiconductor structure, said method comprising:

• forming a first layer adjacent to a substrate, said first layer comprising a first material comprising a first modulus of elasticity;
• forming a first structure within said first layer, said first structure comprising an upper surface;
• and
• forming a stress diverting structure proximate said first structure, wherein said stress diverting structure provides a low mechanical stress region at said upper surface of said first structure when a physical load is applied to said first structure,
• wherein said forming of said stress diverting structure comprises selectively forming a second material comprising a second modulus of elasticity less than said first modulus of elasticity over said upper surface of said first structure for diverting mechanical stress created by said physical load applied to said first structure, and wherein said forming of said stress diverting structure comprises surroundingly encompassing a third material comprising a third modulus of elasticity greater than said first modulus of elasticity around said first structure for diverting mechanical stress created by said physical load applied to said first structure.